Photosensitivity of semiconductor-protein systems

Authors: Rud', V.; Rud', Yu.; Shpunt, V.

Source: Technical Physics, Volume 45, Number 2, February 2000 , pp. 255-259(5)

Publisher: MAIK Nauka/Interperiodica

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Abstract:

Photovoltaic effects have been revealed in a new class of semiconductor/B heterojunctions. Considering various semiconductor materials (Si, GaAs, InSe, CdSiAs₂, ZnGeP₂, and CuGaS₂) and native proteins, we found that it is possible to create photosensitive structures on their basis and managed to prepare them. The photoelectric parameters of the semiconductor/B systems are measured for the first time. It is shows that these structures have a photosensitivity whose level is characteristic of solid-state photoconverters. The spectral dependences of the quantum efficiency of photoconvertion are studied. The window effect for such structures has been established: the long-wavelength boundary of photosensitivity is determined by the energy gap of a semiconductor, whereas the short-wavelength boundary in the vicinity of 3.55 is explained by the quasi-interband transitions in the wide-gap component common for all the heterojunctions—the protein. The conclusion is drawn that the structures of this new class based on crystals of anisotropic semiconductors can be used as broad-band photoconverters of the natural radiation and photoanalyzers of a linearly polarized radiation.

Document Type: Research article

DOI: http://dx.doi.org/10.1134/1.1259608

Publication date: 2000-02-01