Journal of Materials Science: Materials in Electronics logo Springer logo

Publisher: Springer

Related content
Volume 17, Number 2, February 2006

< previous issue | all issues | next issue >

Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review
pp. 87-126(40)
Authors: O'Leary, Stephen; Foutz, Brian; Shur, Michael; Eastman, Lester

Technology and Performance of Millimetre-Wave Multilayer Components
pp. 127-131(5)
Authors: Jakubowska, Małgorzata; Tian, Zhengrong; Free, Charles; Pitt, Keith

Preparation of BaTiO3-Based Nonreducible X7R Dielectric Materials Via Nanometer Powders Doping
pp. 133-136(4)
Authors: Zhou, Xiaohua; Zhang, Shuren; Yuan, Ying; Li, Bo; Liu, Jingsong

< previous issue | all issues | next issue >

Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page