Journal of Materials Science: Materials in Electronics logo Springer logo

Publisher: Springer

Volume 17, Number 2, February 2006
Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content

< previous issue | next issue > | all issues

Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review
pp. 87-126(40)
Authors: O'Leary, Stephen; Foutz, Brian; Shur, Michael; Eastman, Lester

Technology and Performance of Millimetre-Wave Multilayer Components
pp. 127-131(5)
Authors: Jakubowska, Małgorzata; Tian, Zhengrong; Free, Charles; Pitt, Keith

Preparation of BaTiO3-Based Nonreducible X7R Dielectric Materials Via Nanometer Powders Doping
pp. 133-136(4)
Authors: Zhou, Xiaohua; Zhang, Shuren; Yuan, Ying; Li, Bo; Liu, Jingsong

The Crystallographic Properties of Strained Silicon Measured by X-Ray Diffraction
pp. 137-147(11)
Authors: Erdtmann, M.; Langdo, T.

Electrical Properties of Nickel Phthalocyanine Thin Films Using Gold and Lead Electrodes
pp. 149-153(5)
Authors: Varghese, Abraham; Menon, C.

< previous issue | next issue > | all issues

Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages.
Page Help Click here for Page Help
Shopping cart
Tools
Sign in






Need to register?
Sign up here
Text size: A | A | A | A