@article {Cook:2007:0022-2461:7643,
	author = "Cook, Bruce and Wei, Xuezheng and Harringa, Joel and Kramer, Matthew",
	title = "In-situ elevated-temperature TEM study of (AgSbTe2)15(GeTe)85",
	journal = "Journal of Materials Science",
	volume = "42",
	number = "18",
	year = "2007",
	abstract = "(AgSbTe<SUB>2</SUB>)<SUB>15</SUB>(GeTe)<SUB>85</SUB> (TAGS-85) is a p-type semiconductor characterized by a maximum dimensionless thermoelectric figure of merit of 1.4-1.7 at elevated temperature. In this study, the microstructure of as-solidified TAGS-85 at room temperature and elevated temperature (160 &#176;C) was investigated using TEM. At room temperature, pervasive twinning was observed throughout the specimen. Upon heating to above 120 &#176;C, some of the twins dissolved and new point defects began to nucleate. The mechanisms responsible for formation of high temperature defects are discussed.",
	pages = "7643-7646",
	url = "http://www.ingentaconnect.com/content/klu/jmsc/2007/00000042/00000018/00001898",
	doi = "doi:10.1007/s10853-007-1898-x"
}