Si Doping of GaN in Hydride Vapor-Phase Epitaxy
Source: Journal of Electronic Materials, Volume 42, Number 5, May 2013 , pp. 820-825(6)
Abstract:Growth of GaN boules by hydride vapor-phase epitaxy (HVPE) is very attractive for fabrication of GaN substrates. Use of dichlorosilane as a source for Si doping of bulk GaN is investigated. It is shown that no tensile strain is incorporated into mm-thick, Si-doped GaN layers on sapphire substrates if the threading dislocation density is previously reduced to 2.5 × 107 cm−2 or below. High-quality GaN layers with electron densities up to 1.5 × 1019 cm−3 have been achieved, and an upper limit of about 4 × 1019 cm−3 for Si doping of GaN boules was deduced considering the evolution of dislocations with thickness. A 2-inch, Si-doped GaN crystal with length exceeding 6 mm and targeted Si doping of about 1 × 1018 cm−3 is demonstrated.
Document Type: Research Article
Affiliations: 1: Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany, Email: email@example.com 2: Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, and Jülich-Aachen Research Alliance (JARA), 52425, Jülich, Germany 3: Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany
Publication date: May 1, 2013