TiO2 Coating for SnO2:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to H+ Radical Exposure

Authors: Ristova, M.1; Gligorova, A.2; Nasov, I.2; Gracin, D.3; Milun, M.4; Kostadinova-Boskova, H.5; Popeski-Dimovski, R.2

Source: Journal of Electronic Materials, Volume 41, Number 11, November 2012 , pp. 3087-3094(8)

Publisher: Springer

Buy & download fulltext article:

OR

Price: $47.00 plus tax (Refund Policy)

Abstract:

Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates SnO2:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a TiO2 stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, TiO2 films revealed insignificant changes in the optical spectra. The initial sheet resistance of the SnO2:F layer was 14 Ω/sq. The deposition of the top TiO2 layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ω/sq. In addition, the sheet resistance of the double-layer FTO/TiO2 transparent conductive oxide (TCO) electrode increased by 1 Ω/sq as a result of H+ plasma exposure. Regardless of the TiO2 film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive H+ plasma conditions. In this paper we show that ∼50-nm-thick TiO2 coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure.

Keywords: AFM; AXRD; H+ radicals; SEM; TiO2; XPS; XRR; filtered cathodic arc evaporation (FCAE); reflectance; thin-film coating; transmittance

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s11664-012-2221-4

Affiliations: 1: Physics Department, Faculty of Natural Sciences and Mathematics, Gazi Baba bb, Skopje, R. Macedonia, Email: mristova@pmf.ukim.mk 2: Physics Department, Faculty of Natural Sciences and Mathematics, Gazi Baba bb, Skopje, R. Macedonia 3: Institute Rudjer Boskovic, Bijenicka, Zagreb, Croatia 4: Institute of Physics, University in Zagreb, Bijenicka, Zagreb, Croatia 5: Center for Plasma Technologies, PLASMA Ltd., Skopje, R. Macedonia

Publication date: November 1, 2012

Related content

Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page