Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target
Source: Journal of Electronic Materials, Volume 40, Number 11, November 2011 , pp. 2209-2213(5)
Abstract:A Cu alloy/Cu alloy oxide bilayer structure was formed on an n +-a-Si:H substrate using a single Cu alloy target. It was employed for the source/drain electrodes in the fabrication of a-Si:H thin-film transistors with good electrical performance, high thermal stability, and good adhesion. Transmission electron microscopy and electron energy-loss spectroscopy analyses revealed that the initial sputtering of the Cu alloy in O2/Ar allowed for preferential oxidation of Si and the formation of a SiO x /Cu-supersaturated a-Si:H bilayer at the copper oxide–a-Si:H interface. This bilayer turned into an SiO x /Cu3Si bilayer after annealing at 300°C. It provided a stable contact structure with low contact resistance.
Document Type: Research Article
Affiliations: 1: School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702, Republic of Korea 2: School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702, Republic of Korea, Email: firstname.lastname@example.org 3: LG Display Panel Center, 1007, Deogeun-ri, Wollong-myeon, Paju-si, Gyeonggi-do, 413-811, Republic of Korea
Publication date: November 1, 2011