Effects of Varying MBE Growth Conditions on Layered Zn-Se-Te Structures
Source: Journal of Electronic Materials, Volume 40, Number 8, August 2011 , pp. 1775-1780(6)
Abstract:We report the effects of varying growth parameters on the photoluminescence (PL) and time-resolved photoluminescence (TRPL) emission from layered Zn-Se:Te structures with submonolayer quantities of ZnTe grown by a combination of migration-enhanced epitaxy (MEE) and molecular beam epitaxy (MBE). Dependences on Te effusion cell temperature (T Te source) and “wait time” (duration for which all shutters are closed, t all-off) are investigated to show that these parameters contribute towards changing the size and/or composition of the quantum dots (QDs). Optical studies showed that increasing T Te source resulted in the formation of larger QDs. Increasing t all-off from 0 s to 3 s contributed towards the formation of larger QDs, while further increasing t all-off to 9 s led to desorption of Te adatoms which resulted in smaller QDs. These parameters are easy to control, and thus understanding their effects should help us to gain better control towards obtaining high-quality QDs.
Document Type: Research Article
Affiliations: 1: Department of Physics, Queens College of CUNY, 65-30 Kissena Blvd, Flushing, NY, 11367, USA, Email: email@example.com 2: Department of Electrical Engineering, The City College of CUNY, 160 Convent Avenue, New York, NY, 10031, USA 3: Department of Chemistry, The City College of CUNY, Convent Avenue at 138th Street, New York, NY, 10031, USA 4: Department of Physics, Queens College of CUNY, 65-30 Kissena Blvd, Flushing, NY, 11367, USA
Publication date: 2011-08-01