Core-Shell Zn x Cd1−x Se/Zn y Cd1−y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications
Source: Journal of Electronic Materials, Volume 40, Number 8, August 2011 , pp. 1699-1705(7)
Abstract:This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1−y Se-cladded Zn x Cd1−x Se quantum dots (y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1−y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.
Document Type: Research article
Affiliations: 1: Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, Storrs, CT, 06269-2157, USA 2: Intel Corp, Rio Rancho, NM, USA 3: RSoft Design Group, Ossining, NY, USA 4: US Military Academy, West Point, NY, USA 5: Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, Storrs, CT, 06269-2157, USA, Email: email@example.com
Publication date: 2011-08-01