Synthesis and Transport Properties of In4(Se1−x Te x )3
Source: Journal of Electronic Materials, Volume 40, Number 5, May 2011 , pp. 1202-1205(4)
Abstract:Polycrystalline samples of In4(Se1−x Te x )3 were synthesized by using a melting–quenching–annealing process. The thermoelectric performance of the samples was evaluated by measuring the transport properties from 290 K to 650 K after sintering using the spark plasma sintering (SPS) technique. The results indicate that Te substitution can effectively reduce the thermal conductivity while maintaining good electrical transport properties. In4Te3 shows the lowest thermal conductivity of all compositions tested.
Document Type: Research Article
Affiliations: 1: Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou, 310018, China, Email: firstname.lastname@example.org 2: Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou, 310018, China
Publication date: 2011-05-01