Processing and Thermoelectric Performance Characterization of Thin-Film Devices Consisting of Electrodeposited Bismuth Telluride and Antimony Telluride Thin-Film Legs
Source: Journal of Electronic Materials, Volume 40, Number 5, May 2011 , pp. 759-764(6)
Abstract:Thermopile thin-film devices were fabricated by successive electrodeposition of p-type Sb-Te and n-type Bi-Te films. The thermopile processed with 1-m-thick SiO2 as an insulating layer on the thin-film legs exhibited sensitivity of 57.5 mV/K, much larger than the 7.3 mV/K measured for a thermopile with an insulating layer of 6-m-thick photoresist. Sensitivity of 30.4 mV/K was obtained for a thermopile with a 1-m-thick SiN x insulating layer.
Document Type: Research Article
Affiliations: 1: Department of Materials Science and Engineering, Hongik University, Seoul, 121-791, Korea 2: Department of Materials Science and Engineering, Hongik University, Seoul, 121-791, Korea, Email: email@example.com
Publication date: May 1, 2011