Solution Growth and Thermoelectric Properties of Single-Phase MnSi1.75−x
Source: Journal of Electronic Materials, Volume 40, Number 5, May 2011 , pp. 1165-1170(6)
Abstract:We have investigated the crystal growth of single-phase MnSi1.75−x by a temperature gradient solution growth (TGSG) method using Ga and Sn as solvents and MnSi1.7 alloy as the solute, and measured the thermoelectric properties of the resulting crystals. Single-phase Mn11Si19 and Mn4Si7 crystals were grown successfully using Ga and Sn as solvents, respectively. The typical size of a grown ingot of Mn11Si19 was 2 mm to 4 mm in thickness and 12 mm in diameter, whereas Mn4Si7 had polyhedral shape with dimensions in the range of several millimeters. The single-phase Mn11Si19 has good electrical conduction ( = 0.89 × 10−3 Ω cm to 1.09 × 10−3 Ω cm) compared with melt-grown multiphase higher-manganese silicide (HMS) crystals. The Seebeck coefficient, power factor, and thermal conductivity were 77 V K−1 to 85 V K−1, 6.7 W cm−1 K−2 to 7.2 W cm−1 K−2, and 0.032 W cm−1 K−1, respectively, at 300 K.
Document Type: Research Article
Affiliations: 1: Ibaraki University, 4-12-1 Nakanarusawa-cho, Hitachi-shi, Ibaraki, 316-8511, Japan, Email: email@example.com 2: Ibaraki University, 4-12-1 Nakanarusawa-cho, Hitachi-shi, Ibaraki, 316-8511, Japan 3: Salesio Polytechnic, 4-6-8 Koyamagaoka, Machida, Tokyo, 194-0215, Japan 4: Tokyo University of Science, 2641 Yamazaki, Noda, Chiba, 278-8510, Japan
Publication date: May 1, 2011