@article {Yasuda:2010:0361-5235:1118,
	author = "Yasuda, K. and Niraula, M. and Oka, H. and Yoneyama, T. and Matsumoto, K. and Nakashima, H. and Nakanishi, T. and Katoh, D. and Agata, Y.",
	title = "Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy",
	journal = "Journal of Electronic Materials",
	volume = "39",
	number = "7",
	year = "2010",
	abstract = "Electrical properties of halogen-doped CdTe layers grown on Si substrates using iodine and chlorine dopants are presented. No change in electrical properties of the layers was observed with chlorine as a dopant. However, doping with iodine resulted in highly conductive <I>n</I>-type layers or highly resistive <I>p</I>-type layers depending upon the growth conditions, even though a similar amount of dopant was introduced into the growth chamber. Layers grown at 560&#176;C, with a vapor-phase Te/Cd precursor ratio of 3.0, were <I>p</I>-type. The resistivity of the layers remained unchanged for low dopant supply rates, but increased abruptly when the dopant supply rate was increased beyond a certain value. On the other hand, layers grown at 325&#176;C with Te/Cd ratios from 0.1 to 0.25 were <I>n</I>-type. A maximum free electron concentration of 1.3 &#215; 10<SUP>17</SUP> cm<SUP>&#8722;3</SUP> was obtained at room temperature. The types and conductivities of the grown layers were strongly dependent on the growth conditions.",
	pages = "1118-1123",
	url = "http://www.ingentaconnect.com/content/klu/jem/2010/00000039/00000007/00001241",
	doi = "doi:10.1007/s11664-010-1241-1",
	keyword = "CdTe epilayers, halogen doping, MOVPE, Si substrates, radiation detectors"
}