A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe

Authors: Zhang, J.1; Tsen, G.2; Antoszewski, J.2; Dell, J.2; Faraone, L.2; Hu, W.3

Source: Journal of Electronic Materials, Volume 39, Number 7, July 2010 , pp. 1019-1022(4)

Publisher: Springer

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Abstract:

In order to evaluate the effectiveness of CdTe surface passivating layers, HgCdTe photoconductors with and without CdTe sidewall passivation were fabricated. As expected, photoconductors with CdTe sidewall passivation demonstrated significantly higher responsivity in comparison with those without sidewall passivation, indicating the effectiveness of molecular-beam epitaxially (MBE)-grown CdTe as a passivation layer in reducing surface recombination velocity. Characterization of the responsivity differences between photoconductors with and without sidewall CdTe passivation offers a potential method for measuring the interface/surface recombination velocity. This has been demonstrated in this paper by extracting the value of the surface recombination velocity using the Synopsys Sentaurus commercial modeling package to fit experimental responsivity data for fully and partially passivated devices.

Keywords: CdTe passivation; HgCdTe photoconductive device; Interface effects; semiconductor device modeling; surface recombination velocity

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s11664-010-1083-x

Affiliations: 1: Microelectronics Research Group, School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA, 6009, Australia, Email: zhang-j@ee.uwa.edu.au 2: Microelectronics Research Group, School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA, 6009, Australia 3: National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

Publication date: July 1, 2010

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