Defect-Related White-Light Emission from ZnO in an n-Mg0.2Zn0.8O/n-ZnO/SiO x Heterostructure on n-Si
Source: Journal of Electronic Materials, Volume 39, Number 6, June 2010 , pp. 652-655(4)
Abstract:An n-Mg0.2Zn0.8O/n-ZnO/SiO x (x < 2) heterostructure has been fabricated on n-Si by sputtering and electron-beam evaporation. The device showed nonrectifying behavior, and emitted strong white light under reverse bias with positive voltages applied to n-Si. The white-light electroluminescence (EL) is believed to result from electron–hole recombination at defect levels of ZnO. The EL mechanism has been tentatively explained in terms of the energy band structure of the device under forward and reverse bias.
Document Type: Research Article
Affiliations: 1: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China 2: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China, Email: email@example.com
Publication date: June 2010