Evolution of Optical and Mechanical Properties of Semiconductors over 40 Years
Source: Journal of Electronic Materials, Volume 39, Number 6, June 2010 , pp. 635-641(7)
Abstract:We discuss the evolution, over a 40-year period, of the optical and mechanical properties of selected monoatomic, binary, and ternary semiconductors. From this systematic monitoring it can be shown that diffusion and stress relaxation processes over time lead to the host atoms migrating to their proper equilibrium positions, and a more uniform redistribution of impurities or structural defects is formed. We demonstrate that the highly ordered nature that develops over time, 40 years in this case, facilitates enhanced stimulated emission and increases the radiative recombination efficiency and spectral range of luminescence. This suggests new ways to realize semiconductor devices with greater temporal stability.
Document Type: Research Article
Affiliations: 1: Institute of Applied Physics, Academy of Sciences, Kishinev, Moldova, Email: firstname.lastname@example.org 2: Center for Optical Materials Science and Engineering Technologies (COMSET) and the School of Materials Science and Engineering, Clemson University, Clemson, SC, USA
Publication date: June 1, 2010