Characterization of Generation Lifetime and Surface Generation Velocity of Semiconductor Wafers by a Contactless Zerbst Method

Authors: Yoshida, Haruhiko1; Kuge, Shingo2

Source: Journal of Electronic Materials, Volume 39, Number 6, June 2010 , pp. 773-776(4)

Publisher: Springer

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Abstract:

A contactless Zerbst method has been developed to characterize the generation lifetime and the surface generation velocity of a semiconductor wafer. This characterization is unaffected by the gate leakage current or the device fabrication process. In this study, this contactless Zerbst method was used to characterize the generation lifetime and the surface generation velocity of a partially Au-doped Si wafer. The results demonstrate that the contactless Zerbst method is a powerful technique for characterizing the generation lifetimes and the surface recombination velocities of semiconductor wafers.

Keywords: Semiconductor; Zerbst method; contactless electrical characterization; generation lifetime; surface generation velocity

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s11664-010-1126-3

Affiliations: 1: Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, 671-2280, Japan, Email: yoshida@eng.u-hyogo.ac.jp 2: Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, 671-2280, Japan

Publication date: June 1, 2010

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