Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers
Source: Journal of Electronic Materials, Volume 39, Number 6, June 2010 , pp. 794-798(5)
Abstract:Epitaxial layers of (Ga,Mn)As ferromagnetic semiconductor have been subjected to low-energy ion implantation by applying a very low fluence of either chemically active, oxygen ions or inactive ions of neon noble gas. Several complementary characterization techniques have been used with the aim of studying the effect of ion implantation on the layer properties. Investigation of their electrical and magnetic properties revealed that implantation with either O or Ne ions completely suppressed both the conductivity and ferromagnetism in the layers. On the other hand, Raman spectroscopy measurements evidenced that O ion implantation influenced optical properties of the layers noticeably stronger than did Ne ion implantation. Moreover, structural modifications of the layers caused by ion implantation were investigated using high-resolution x-ray diffraction technique. A mechanism responsible for ion-implantation-induced suppression of the conductivity and ferromagnetism in (Ga,Mn)As layers, which could be applied as a method for tailoring nanostructures in the layers, is discussed in terms of defects created in the layers by the two implanted elements.
Document Type: Research Article
Affiliations: 1: Institute of Physics, UMCS, Pl. Marii Curie-Sklodowskiej 5, 20-031, Lublin, Poland 2: Institute of Physics, Polish Academy of Sciences, 02-668, Warsaw, Poland 3: Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Budapest, 1525, Hungary 4: Institute of Physics, Polish Academy of Sciences, 02-668, Warsaw, Poland, Email: firstname.lastname@example.org
Publication date: 2010-06-01