Secondary Ion Mass Spectrometry and Time-of-Flight Secondary Ion Mass Spectrometry Study of Impurity Measurements in HgCdTe

Authors: Price, Steve; Wang, Larry; Wang, Alice; Ginwalla, Arwa; Mowat, Ian

Source: Journal of Electronic Materials, Volume 36, Number 8, August 2007 , pp. 1106-1109(4)

Publisher: Springer

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Abstract:

In this study, time-of-flight (TOF) secondary ion mass spectrometry (SIMS) was compared against dynamic SIMS to determine detection limits and background levels for nine impurities: Li, Na, K, Al, Ni, As, In, Fe, and Cu. Statistics were gathered by measuring six material test structure samples from six different liquid phase epitaxy (LPE) HgCdTe double layer heterojunction (DLHJ) wafers. Also included is a comparison between dynamic SIMS and TOF-SIMS capabilities.

Keywords: SIMS; TOF-SIMS; HgCdTe; impurities; Na; Cu

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s11664-007-0183-8

Affiliations: 1: Email: sprice@raytheon.com

Publication date: 2007-08-01