Accurate Determination of the Matrix Composition Profile of Hg_1-xCd_xTe by Secondary Ion Mass Spectrometry

Authors: Wang, Larry; Wang, Alice; Price, Steve

Source: Journal of Electronic Materials, Volume 36, Number 8, August 2007 , pp. 910-912(3)

Publisher: Springer

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Abstract:

In this report, we present a new secondary ion mass spectrometry (SIMS) analysis technique to provide accurate Cd composition profiles based on the measurement of HgCs⁺ and CdCs⁺ cluster ions. Study of Hg_1-xCd_x Te samples with different x values shows that x/(1 − x) is linearly proportional to HgCs⁺/CdCs⁺ over the range of x = 0.2 to x = 0.9. This technique allows us to obtain an accurate Cd profile for a multilayer HgCdTe sample with different x values for each layer using a single standard with known x value.

Keywords: Secondary ion mass spectrometry (SIMS); HgCdTe; composition analysis; depth calibration

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s11664-007-0131-7

Affiliations: 1: Email: lwang@eaglabs.com

Publication date: 2007-08-01