Antimonide Type-II “W” Photodiodes with Long-Wave Infrared R 0 A Comparable to HgCdTe
Authors: Canedy, C.L.; Aifer, E.H.; Vurgaftman, I.; Tischler, J.G.; Meyer, J.R.; Warner, J.H.; Jackson, E.M.
Source: Journal of Electronic Materials, Volume 36, Number 8, August 2007 , pp. 852-856(5)
Abstract:The recent development of graded-gap W-structured superlattices (GG-Ws) has led to a substantial improvement in the dark current performance of infrared photodiodes implemented with type-II superlattices (T2SLs). A study of ten GG-W photodiode wafers with 50% power responsivity cutoffs from 9 m to 13.4 m is presented. Dark current performance has increased by a factor of 10 over that of previous type-II structures, without degrading quantum efficiency. In relation to HgCdTe (MCT) based photodiodes, several samples in the study show effective dynamic-resistance-area products close to the MCT trend line for diffusion-limited R 0 A.
Document Type: Research Article
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Publication date: August 2007