Excimer Laser Etching Process of CdTe Crystals for Formation of Deep Vertical Trenches
Authors: Yasuda, K.; Niraula, M.; Nakamura, K.; Yokota, M.; Shingu, I.; Noda, K.; Agata, Y.; Abe, K.; Eryu, O.
Source: Journal of Electronic Materials, Volume 36, Number 8, August 2007 , pp. 837-840(4)
Abstract:Deep isolation trenches with high aspect ratio were formed on CdTe crystals using the excimer laser etching technique. Vertical trenches 80-m deep and 55-m wide were formed in 5 min by irradiating a laser on the CdTe crystal through a contact-type metal mask in vacuum. Surface chemistry of the laser-irradiated CdTe crystal was examined by Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and photoluminescence (PL) to determine the extent of laser-induced damage. It was found that the damaged layer remains confined to the thin surface layer in the submicron range, which could be easily removed by a light Br-methanol etch.
Document Type: Research Article
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Publication date: August 1, 2007