Characterization of Epitaxial Indium Nitride Interlayers for Ohmic Contacts to Silicon Carbide
Authors: Mohammad, F.; Cao, Y.; Porter, L.
Source: Journal of Electronic Materials, Volume 36, Number 4, April 2007 , pp. 312-317(6)
Abstract:Ohmic contacts to n-type 4H- and 6H-SiC without postdeposition annealing were achieved using an interlayer of epitaxial InN beneath a layer of Ti. The InN films were grown by reactive dc magnetron sputtering at 450°C, whereas the Ti films were deposited by electron-beam evaporation at room temperature. The InN films were characterized by x-ray diffraction (XRD), secondary electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM), and Hall-effect measurements. Both XRD and TEM observations revealed that the Ti and InN films have epitaxial relationships with the 6H-SiC substrate as follows: (0001)[
Document Type: Research Article
Affiliations: Email: firstname.lastname@example.org
Publication date: April 1, 2007