Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO
Authors: Wright, J.S.; Stafford, L.; Gila, B.P.; Norton, D.P.; Pearton, S.J.; Wang, Hung-Ta; Ren, F.
Source: Journal of Electronic Materials, Volume 36, Number 4, April 2007 , pp. 488-493(6)
Abstract:The effect of cryogenic temperatures during metal deposition on the contact properties of Pd, Pt, Ti, and Ni on bulk single-crystal n-type ZnO has been investigated. Deposition at both room and low temperature produced contacts with Ohmic characteristics for Ti and Ni metallizations. By sharp contrast, both Pd and Pt contacts showed rectifying characteristics after deposition with barrier heights between 0.37 eV and 0.69 eV. Changes in contact behavior were measured on Pd to anneal temperatures of ∼300 °C, showing an increase in barrier height along with a decrease in ideality factor with increasing annealing temperature. This difference with annealing temperature is in sharp contrast to previous results for Au contacts to ZnO. There were no differences in near-surface stoichiometry for the different deposition temperatures; however, low temperature contacts demonstrated some peeling/cracking for Pt and Pd.
Document Type: Research Article
Affiliations: Email: email@example.com
Publication date: April 1, 2007