Epitaxial Growth of GaN Layers on Metallic TiN Buffer Layers

Authors: Uchida, Yu; Ito, Kazuhiro; Tsukimoto, Susumu; Ikemoto, Yuhei; Hirata, Koji; Shibata, Naoki; Murakami, Masanori

Source: Journal of Electronic Materials, Volume 35, Number 10, October 2006 , pp. 1806-1811(6)

Publisher: Springer

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Abstract:

To improve GaN light-emitting diode light emission, we produced metal organic chemical vapor deposition (MOCVD)-grown, continuous, flat GaN layers on metallic TiN buffer layers deposited on sapphire substrates. Three important conditions were found: (a) the sapphire substrate surface plane should be (1120), (b) the TiN layer surface plane should be (111), and (c) the TiN buffer layer nitrogen content should be higher than that of stoichiometric TiN. Reduction of TiN layer thickness reduced TiN buffer layer surface roughness. Threading dislocation density in GaN layers grown on TiN buffer layers was much lower than that in GaN layers grown on AlN.

Keywords: EPITAXIAL GROWTH OF GAN; FILM THICKNESS; NITROGEN CONTENT; TIN BUFFER LAYERS

Document Type: Regular Paper

Publication date: October 1, 2006

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