Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma

Authors: Golding, T.; Hellmer, R.; Bubulac, L.; Dinan, J.; Wang, L.; Zhao, W.; Carmody, M.; Sankur, H.; Edwall, D.

Source: Journal of Electronic Materials, Volume 35, Number 6, June 2006 , pp. 1465-1469(5)

Publisher: Springer

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Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize 1H and 2H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the 1014 cm−3 to 1018 cm−3 range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the 1H and 2H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples.

Keywords: HgCdTe; glow discharge plasma; molecular beam epitaxy (MBE); silicon substrate

Document Type: Research Article

DOI: http://dx.doi.org/10.1007/s11664-006-0285-8

Affiliations: Email: golding@amethystresearch.com

Publication date: June 1, 2006

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