In-situ spectroscopic study of the As and Te on the Si (112) surface for high-quality epitaxial layers
Authors: Jaime-Vasquez, M.; Martinka, M.; Jacobs, R.; Groenert, M.
Source: Journal of Electronic Materials, Volume 35, Number 6, June 2006 , pp. 1455-1460(6)
Abstract:A detailed analysis of the As-exposed Si (112) and subsequent Te exposure was performed. X-ray photoelectron spectroscopy shows that the Te- and As-exposed Si (112) surface had 70% As and 27% Te coverage, respectively. Direct surface coverage measurement with ion scattering spectroscopy (ISS) shows that the Si (111) surface is completely covered by As, and that of the Si (112) had about 78% and 20% coverage of As and Te, respectively. Finally, using ISS shadowing effects, it was found that the Te atoms were positioned mainly on the step edges.
Document Type: Research article
Publication date: 2006-06-01