Hybrid deposition of piezoelectric (112¯0) MgxZn1−xO (0≤x≤0.3) on (011¯2) R-sapphire substrates using RF sputtering and MOCVDR-sapphire substrates using RF sputtering and MOCVD

Authors: Saraf, Gaurav; Chen, Ying; Siegrist, Theo; Wielunski, Leszek; Lu, Yicheng

Source: Journal of Electronic Materials, Volume 35, Number 6, June 2006 , pp. 1306-1310(5)

Publisher: Springer

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MgxZn1−xO (0≤x≤0.3) films are deposited on R-plane sapphire substrates using a hybrid deposition technique: metalorganic chemical vapor deposition and radiofrequency (RF) sputtering. Thick piezoelectric MgxZn1−xO films are deposited by RF sputtering on MOCVD grown thin ZnO buffers on R-sapphire substrate. Molar ratio of ZnO and MgO powders are mixed to form MgxZn1−xO (0≤x≤0.3) sputtering targets with NiO (2–3 wt.%) added for compensation doping to achieve piezoelectricity. Field emission scanning electron microscopy shows that the deposited films are dense and uniform. X-ray diffraction indicates that the sputter-deposited MgxZn1−xO (0≤x≤0.3) films retain the wurtzite crystal structure. The crystallinity of the deposited films is further improved by postannealing at 700°C in oxygen. Compositional analysis of the films is carried out using Rutherford back-scattering. High-frequency and low-loss surface acoustic wave (SAW) testing devices fabricated on these films are demonstrated. The SAW properties are tailored to changing Mg compositions. In the ZnO/R-Al2O3 system, two types of wave modes, the Rayleigh-type and the Love-type wave modes, are investigated.
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