Laser Forming of Silicon Films Using Nanoparticle Precursor

Authors: Bet, Sachin; Kar, Aravinda

Source: Journal of Electronic Materials, Volume 35, Number 5, May 2006 , pp. 993-1004(12)

Publisher: Springer

Buy & download fulltext article:


Price: $47.00 plus tax (Refund Policy)


Polycrystalline silicon films containing cubic silicon crystallites of size 3–4 m have been formed on nickel substrates by fusing and sintering silicon nanoparticle precursors using a laser. A mechanism for the fusion and sintering of these nanoparticles, resulting in reduced heat input and continuous film formation by surface and grain boundary diffusion, is discussed. Films were characterized by optical microscopy, scanning electron microscopy, energy-dispersive spectroscopy, and Raman spectroscopy. Films were doped with n- as well as p-type dopants by using a laser doping technique and their current–voltage (I–V) characteristics were measured.
Related content


Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page