Interfacial Reactions in the Sn-(Ag)/(Ni,V) Couples and Phase Equilibria of the Sn-Ni-V System at the Sn-Rich Corner

Authors: Chen, Chih-Chi; Chen, Sinn-Wen; Kao, Ching-Ya

Source: Journal of Electronic Materials, Volume 35, Number 5, May 2006 , pp. 922-928(7)

Publisher: Springer

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Abstract:

Ni-7wt.%V is commonly used as the barrier layer material in the under-bump metallurgy in the microelectronic industry. Although interfacial reactions between various solders with the nickel substrate have been investigated intensively, the effects of vanadium addition upon the solder/(Ni,V) interfacial reactions have not been studied. Sn/(Ni,V) and Sn-Ag/(Ni,V) interfacial reactions at 250°C were investigated in this study using the reaction couple technique. The vanadium contents of the (Ni,V) substrates examined in this study are 3 wt.%, 5 wt.%, 7 wt.%, and 12 wt.% and the reaction time is 12 h. The results indicate that when the vanadium contents in the (Ni,V) substrate are 5 wt.% and higher, the Sn/(Ni,V) and Sn-Ag/(Ni,V) interfacial reactions are different from those in the solder/Ni couples. Besides the Ni3Sn4 phase as commonly formed in the reaction with Ni substrate, a new ternary T phase has been found, and the reaction path is L/Ni3Sn4/T/(Ni,V). A 250°C Sn-Ni-V isothermal section is proposed based on the three constituent binary systems and limited experimental results obtained in this study. The reaction path is illustrated with the proposed Sn-Ni-V isothermal section. No stable ternary Sn-Ni-V phase is found from the phase equilibria study, and the new T phase is likely a metastable phase.

Keywords: INTERFACIAL REACTIONS; SN-AG-NI-V; SN-NI-V; UNDER-BUMP METALLIZATION (UBM)

Document Type: Regular Paper

Publication date: May 1, 2006

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