Ion Beam Mixing for Processing of Nanostructure Materials
Authors: Abedrabbo, S.; Arafah, D.E.; Gokce, O.; Wielunski, L.S.; Gharaibeh, M.; Celik, O.; Ravindra, N.M.
Source: Journal of Electronic Materials, Volume 35, Number 5, May 2006 , pp. 834-839(6)
Abstract:Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO2-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO2 formed in the matrix.
Document Type: Research Article
Publication date: May 1, 2006