Ion Beam Mixing for Processing of Nanostructure Materials

Authors: Abedrabbo, S.; Arafah, D.E.; Gokce, O.; Wielunski, L.S.; Gharaibeh, M.; Celik, O.; Ravindra, N.M.

Source: Journal of Electronic Materials, Volume 35, Number 5, May 2006 , pp. 834-839(6)

Publisher: Springer

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Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO2-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO2 formed in the matrix.


Document Type: Research Article

Publication date: May 1, 2006

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