Characterization of Ti schottky diodes on epi-regrown 4H-SiC
Authors: Zhu, Lin; Li, Canhua; Chow, T.; Bhat, Ishwara; Jones, Kenneth; Scozzie, C.; Agarwal, Anant
Source: Journal of Electronic Materials, Volume 35, Number 4, April 2006 , pp. 754-757(4)
Abstract:The electrical characteristics of Schottky diodes fabricated on n-type epi layers regrown over an n-drift layer and regrown over a drift layer with selective boron-implanted p-type regions have been evaluated and compared to those on virgin, as-grown commercial epi-drift layers. Slightly lower (0.1–0.2 eV) Schottky barrier heights and larger ideality factors (1.2 vs. 1.03) were extracted for the regrown diodes from forward current-voltage and capacitance-voltage measurements. Although more than 1–2 orders higher reverse leakage current were also observed, our epi-regrowth process is still considered adequate for novel power device realization.
Document Type: Research Article
Affiliations: Email: Lin.email@example.com
Publication date: April 2006