Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates
Authors: Anderson, T.; Ren, F.; Covert, L.; Lin, J.; Pearton, S.; Dalrymple, T.; Bozada, C.; Fitch, R.; Moser, N.; Bedford, R.; Schimpf, M.
Source: Journal of Electronic Materials, Volume 35, Number 4, April 2006 , pp. 675-679(5)
Abstract:By using a frequency-tripled Nd:YVO4 laser source (355 nm) for drilling through-wafer via holes in SiC substrates, we can reduce the surface contamination and achieve better smoothness inside the via holes compared to use of the more common 1064-nm Nd:YVO4 laser. The sheet and contact resistance of AlGaN/GaN HEMT layers grown on SiC substrates were similar after formation of vias by 355-nm laser drilling to those of the undrilled reference sample. By sharp contrast, 1064-nm laser drilling produces significant redeposition of ablated material around the via and degrades the electrical properties of the HEMT layers.
Document Type: Research Article
Affiliations: Email: firstname.lastname@example.org
Publication date: 2006-04-01