Investigation of GaN_xP_1−x/GaP LED structure optical properties

Authors: Peternai, L.; Kovac, J.; Jakabovic, J.; Gottschalch, V.; Rheinlaender, B.

Source: Journal of Electronic Materials, Volume 35, Number 4, April 2006 , pp. 654-657(4)

Publisher: Springer

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Abstract:

GaN_xP_1−x alloy represents a novel compound semiconductor that has attracted considerable interest as a candidate for realization of light emitting diodes (LEDs) in the green-red range of the visible spectra. Simple GaN_xP_1−x/GaP LED structures grown by low-preassure metalorganic vapor phase epitaxy and containing different N contents (0.6-2.3%) were investigated. The hierarchy of N complexes that generate different bound states were determined from photocurrent and electroluminescence spectra for different N concentrations in the GaN_xP_1−x layer. From the experimental measurements, it was confirmed that the electroluminescence emission peaks show discrete emission maxima at ∼608 nm and ∼628 nm with increasing N content due to formation of N clusters.

Keywords: GaNP; light-emitting diode (LED); electroluminescence; dilute nitride

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s11664-006-0115-z

Affiliations: 1: Email: lorant.peternai@stuba.sk

Publication date: 2006-04-01