Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition
Authors: Li, Y.; Heo, Y.; Erie, J.; Kim, H.; Ip, K.; Pearton, S.; Norton, D.
Source: Journal of Electronic Materials, Volume 35, Number 4, April 2006 , pp. 530-537(8)
Abstract:The transport and optical properties of phosphorus-doped (Zn,Mg)O thin films grown via pulsed laser deposition (PLD) are studied. The carrier type of as-deposited (Zn,Mg)O:P films converts from n-type to p-type with increasing oxygen partial pressure. All the films exhibit good crystallinity with c-axis orientation. This result indicates the importance of oxidation conditions in realizing p-type (Zn,Mg)O:P films. The as-deposited ZnO:P film properties show a strong dependence on the deposition ambient at different growth temperatures. The resistivity of the samples deposited in O3/O2 mixture is two orders of magnitude higher than the films grown in oxygen and O2/Ar/H2 mixture. The room-temperature photoluminescence (PL) of the as-deposited films has been shown that growing in the O2/Ar/H2 mixture ambient significantly increases the band edge emission while inhibiting the visible emission. The enhanced ultraviolet (UV) emission in the films grown in O2/Ar/H2 mixture may result from hydrogen passivation of the deep level emission centers. The annealed ZnO:P films are n-type with nonlinear dependence of resistivity on annealing temperature. The resistivity increases in the films with annealing at 800°C while decreasing with further increasing annealing temperature. Strong visible light emission is observed from the ZnO:P films annealed in oxygen.
Document Type: Research article
Publication date: 2006-04-01