Optimization of Active Region for 1.3-μm GaInAsP Compressive-Strain Multiple-Quantum-Well Ridge Waveguide Laser Diodes

Authors: Lei, Po-Hsun; Yang, Chyi-Dar; Wu, Ming-Yuan; Hu, Chih-Wei; Wu, Meng-Chyi; Huang, Yin-Hsun; Ho, Wen-Jeng

Source: Journal of Electronic Materials, Volume 35, Number 2, February 2006 , pp. 243-249(7)

Publisher: Springer

Buy & download fulltext article:

Price: $47.00 plus tax (Refund Policy)

Abstract:

We report on the optimization of Ga_0.27In_0.73As_0.67P_0.33/Ga_0.11In_0.89As_0.24P_0.76 compressive-strain multiple-quantum-well (CS-MQW) grown by low-pressure metalorganic chemical vapor deposition for 1.3-μm ridge-waveguide laser diodes (LDs). The structural and optical properties are characterized by double-crystal x-ray diffraction and photoluminescence (PL) measurements, respectively. The optimum thicknesses of the well, barrier, and waveguide layer of the active region are 4 nm, 10 nm, and 100 nm, respectively. The GaInAsP/GaInAsP CS-MQW as-cleaved LDs with the optimum active region, a 3.5-μm-width ridge, and a 900-μm-cavity length exhibit the threshold current density of 1.09 kA/cm², a differential quantum efficiency of 30%, a characteristic temperature of 60 K, a maximum operating temperature up to 75°C, and a red-shift rate of 0.30 nm/°C.

Keywords: INGAASP; 1.3-MUM LASER DIODES; PHOTOLUMINESCENCE; ACTIVE REGION

Document Type: Regular paper

Publication date: 2006-02-01