Solid-State Phase Formation between Pd Thin Films and GaSb

Authors: Robinson, J.A.; Mohney, S.E.

Source: Journal of Electronic Materials, Volume 35, Number 1, January 2006 , pp. 48-55(8)

Publisher: Springer

Buy & download fulltext article:

OR

Price: $47.00 plus tax (Refund Policy)

Abstract:

Knowledge of the interaction between a thin metal film and a compound semi-conductor can be used to engineer electrical contacts to the semiconductor. In this study, we examine the reaction between a 50 nm layer of Pd and a GaSb substrate annealed at 100–350°C for 10–360 min using transmission electron microscopy (TEM) and x-ray diffraction (XRD). We report on the formation of Pd-rich nanocrystalline and polycrystalline ternary phases at temperatures below 200°C, followed by Pd-Ga and Pd-Sb binary phases above 200°C.

Keywords: GASB; PALLADIUM; THIN FILMS; OHMIC CONTACTS

Document Type: Research article

Publication date: 2006-01-01

Related content

Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page