Solid-State Phase Formation between Pd Thin Films and GaSb
Authors: Robinson, J.A.; Mohney, S.E.
Source: Journal of Electronic Materials, Volume 35, Number 1, January 2006 , pp. 48-55(8)
Abstract:Knowledge of the interaction between a thin metal film and a compound semi-conductor can be used to engineer electrical contacts to the semiconductor. In this study, we examine the reaction between a 50 nm layer of Pd and a GaSb substrate annealed at 100–350°C for 10–360 min using transmission electron microscopy (TEM) and x-ray diffraction (XRD). We report on the formation of Pd-rich nanocrystalline and polycrystalline ternary phases at temperatures below 200°C, followed by Pd-Ga and Pd-Sb binary phases above 200°C.
Document Type: Research article
Publication date: 2006-01-01