Characterization of physical and electrical properties of BaTiO3 films deposited on p-Si by modified polymeric precursors

Authors: Konofaos, N.; Wang, Zhongchun; Georga, S.; Krontiras, C.; Pisanias, M.; Sotiropoulos, J.; Evangelou, E.

Source: Journal of Electronic Materials, Volume 34, Number 9, September 2005 , pp. 1259-1263(5)

Publisher: Springer

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Highly uniform BaTiO3 (BTO) films with thickness well below 100 nm were deposited on p-Si by spin coating using a modified polymeric precursor method. The polymeric precursor gel was redissolved into glacial acetic acid to improve the wetting property of the spinning solution to the Si substrates (2.5-in. diameter). The morphology, composition, thickness, and refractive index of the films were investigated using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), and ellipsometry. The films are found to be polycrystalline. They exhibit uniformity over the whole wafer in regard to thickness, composition, and absence of surface features. The capacitors constructed with the BTO films on Si were further investigated by electrical characterizations. Current-voltage (I-V) measurements reveal a leakage current due to a Poole-Frenkel mechanism. The energy gap is evaluated to be 3.95 eV. A metal-insulator-semiconductor (MIS) behavior is observed through capacitance-conductance-voltage (C-G-V) measurements. The interface state density (Dit) at the BTO/p-Si interface is estimated to be of the order of 1012 eV−1 cm−2.

Keywords: High-k dielectrics; barium titanate; electrical characterization; interface states; metal-oxide-semiconductor (MOS) capacitors; polymeric precursor method

Document Type: Research Article


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Publication date: September 1, 2005

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