P-Type Doping Utilizing Nitrogen and Mn Doping of ZnO Using MOCVD for Ultraviolet Lasers and Spintronic Applications

Authors: Egerton, E. James; Sood, Ashok K.; Singh, Rajwinder; Puri, Yash R.; Look, David C.; Steiner, Todd

Source: Journal of Electronic Materials, Volume 34, Number 8, August 2005 , pp. 1183-1183(1)

Publisher: Springer

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Abstract:

ZnO has distinct advantages over competing technologies such as GaN. Two advantages are the inherent improvement in ultraviolet (UV) brightness, necessary for the biological sensor application where the signal-to-noise ratio (SNR) is enhanced by a bright UV source, and the second is the availability of ZnO lattice-matched substrates, which will result in lower defect densities than GaN, higher manufacturing yield, and then lower cost. The ZnO material system's advantage in exciton binding energy of 60 MEV, a three-time improvement over GaN, will result in UV emitters with superior performance.

Keywords: ZNO; P-TYPE; DOPING

Document Type: Erratum

Publication date: 2005-08-01