Ion Beam Mixing of Silicon-Germanium Thin Films

Authors: Abedrabbo, Sufian; Arafah, D.-E.; Salem, S.

Source: Journal of Electronic Materials, Volume 34, Number 5, May 2005 , pp. 468-473(6)

Publisher: Springer

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Abstract:

An overview of processing silicon-germanium (Si-Ge) alloys for various applications is presented here. Several methods of formation are briefly summarized. In particular, results of preliminary experiments on ion-beam mixing of Si-Ge layered structures deposited by physical vapor deposition and subsequently ion implanted with varying doses of argon are presented. Different layered structures have been designed and mixed to obtain optimal process conditions. The ion beam mixing process yields films with a gradual band-gap variation from 1.12 eV to 0.85 eV, thus allowing quite a wider spectrum of wavelengths to be absorbed. Rutherford backscattering spectrometry (RBS) has been used to characterize the nature and extent of the mixing of as-deposited and irradiated films.

Keywords: ION BEAM MIXING; LAYERED STRUCTURES; RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS); SILICON-GERMANIUM (SI-GE); THIN FILMS

Document Type: Research Article

Publication date: May 1, 2005

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