Planar Defects in 4H-SiC PiN Diodes

Authors: Twigg, M.E.; Stahlbush, R.E.; Irvine, K.G.; Sumakeris, J.J.; Chow, T.P.; Lossee, P.A.; Zhu, L.

Source: Journal of Electronic Materials, Volume 34, Number 4, April 2005 , pp. 351-356(6)

Publisher: Springer

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Abstract:

Using plan-view transmission electron microscopy (PVTEM), we have identified stacking faults (SFs) and planar defects in 4H-SiC PiN diodes subjected to electrical bias. Our observations suggest that not all planar defects seen in the PiN diodes are SFs. By performing diffraction-contrast imaging experiments using TEM, we can distinguish SFs from other planar defects. In addition, high-resolution TEM (HRTEM) imaging and analytical TEM have revealed that some planar defects consist of a 3-nm-wide SiC amorphous layer. Many of these planar defects are orientated parallel to {1100} planes, whereas others are roughly parallel to the (0001) plane. The appearance of these planar defects suggests that they are grain boundaries.

Keywords: SILICON CARBIDE; PIN DIODE; TRANSMISSION ELECTRON MICROSCOPY (TEM); STACKING FAULT (SF); DISLOCATIONS

Document Type: Research article

Publication date: 2005-04-01