Drift-Free 10-kV, 20-A 4H-SiC PiN Diodes
Authors: Hull, Brett A.; Das, Mrinal K.; Sumakeris, Joseph J.; Richmond, James T.; Krishnaswami, Sumi
Source: Journal of Electronic Materials, Volume 34, Number 4, April 2005 , pp. 341-344(4)
Abstract:As impressive as the advancement in 4H-SiC material quality has been, 4HSiC PiN diodes continue to suffer from irreversible, forward-voltage instabilities. In this work, we describe PiN diodes designed to block 10 kV and conduct 20 A at less than 4.5 V, which were fabricated on 4H-SiC PiN epitaxial layers that were grown with an innovative epitaxial process that has been developed specifically to suppress VF drift. The diodes fabricated on epitaxial layers that implemented this new epitaxy process showed excellent VF stability, with 86% of the diodes drifting less than 0.1 V during forward current stressing at 10 A (50 A/cm2) for 30 min. However, these improvements in VF drift come with a cost in blocking yield, as the surface morphology and other crystal defects imparted by the epitaxial process resulted in only 1 of 50 diodes reaching the 10-kV blocking specification. Nevertheless, the remarkable progress in VF drift yield brings us closer to commercialization of high-power 4H-SiC PiN diodes.
Document Type: Research article
Publication date: 2005-04-01