Electrical Properties of Titanium-HgCdTe Contacts
Authors: Srivastav, V.; Pal, R.; Sharma, B.L.; Mittal, V.; Gopal, V.; Vyas, H.P.
Source: Journal of Electronic Materials, Volume 34, Number 3, March 2005 , pp. 225-231(7)
Abstract:Transfer length method (TLM) structures were fabricated to characterize the Ti-HgCdTe contacts. Low-temperature measurement of contact resistance was found to be affected by the background-generated carriers in long wavelength infrared HgCdTe material. Measurements carried out by keeping the TLM structures behind a cold shield showed low contact resistance indicative of the formation of a good "Ohmic" contact. Low specific contact resistance of the order of 10−4 Ω-cm2 makes this contact scheme suitable for the fabrication of photoconductive as well as photovoltaic HgCdTe detectors. Annealing the contacts in air at 60°C for 15 days yielded the specific contact resistance values of the same order of magnitude at room temperature; however, low-temperature measurements show a minor change in the specific contact resistance. The current-voltage measurements show that current transport is dominated by the thermionic field emission mechanism.
Document Type: Regular Paper
Publication date: 2005-03-01