The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy

Authors: Matlock, D.M.; Zvanut, M.E.; Wang, Haiyan; Dimaio, Jeffrey R.; Davis, R.F.; Van Nostrand, J.E.; Henry, R.L.; Koleske, Daniel; Wickenden, Alma

Source: Journal of Electronic Materials, Volume 34, Number 1, January 2005 , pp. 34-39(6)

Publisher: Springer

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Abstract:

Electron paramagnetic resonance (EPR) spectroscopy is used to study the unpassivated Mg-related acceptor in GaN films. As expected, the trends observed before and after O₂, N₂, or forming-gas anneals at temperatures <800°C are similar to those typically reported for electrical measurements. However, annealing at temperatures >850°C in O₂ or N₂ permanently removes the signal, contrary to the results of conductivity measurements. Approximately 10¹⁹ cm^-3Mg acceptors were detected in some GaN films grown by chemical vapor deposition (CVD) before acceptor activation, suggesting that it is possible to have electrically active Mg in as-grown CVD material.

Keywords: ELECTRON PARAMAGNETIC RESONANCE (EPR); MG DOPED; GAN; ANNEALING; HYDROGEN; OXYGEN

Document Type: Research article

Publication date: 2005-01-01