Normal-Incidence Mid-Infrared Ge Quantum-Dot Photodetector
Authors: Liu, Fei; Tong, Song; Liu, Jianlin; Wang, Kang L.
Source: Journal of Electronic Materials, Volume 33, Number 8, 1 August 2004 , pp. 846-850(5)
Abstract:Mid-infrared photodetectors were demonstrated by using molecular-beam epitaxy (MBE)-grown self-assembled Ge quantum dots (QDs). The response wavelength ranged from 2.2 m to 3.1 m and peaked at 2.8 m. The peak response wavelengths shifted to 2.9 m and 3.5 m after thermal annealing at 700°C and 900°C for 5 min, respectively. Normal-incidence detection was confirmed, and the mechanism of a Ge QD photodetector was discussed. Calculations showed the key parameters determining response wavelength of the Ge QD infrared photodetector, which agreed with experimental results.
Document Type: Regular Paper
Publication date: August 1, 2004