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Determination of the Direction of Piezoelectric Field in InGaN/GaN Multiple Quantum-Well Structures Grown by Metal-Organic Chemical Vapor Deposition

Authors: Liu, Wei; Chua, Soo Jin; Zhang, Xin Hai; Zhang, Ji

Source: Journal of Electronic Materials, Volume 33, Number 8, 1 August 2004 , pp. 841-845(5)

Publisher: Springer

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Abstract:

The direction of the piezoelectric field in InGaN/GaN multiple quantum-well (MQW) structures grown by metal-organic vapor deposition (MOCVD) was determined using excitation-power-density variable photoluminescence (PL). By comparing the excitation-power-density dependence of the shift of the PL peak and the change of the full-width at half-maximum (FWHM) of the peak from an InGaN/GaN MQW structure and an InGaN MQW-based light-emitting diode (LED), the piezoelectric field in the InGaN/GaN MQW structures was unambiguously determined to be pointing toward the substrate. This result helps to identify the surface polarity of the LED wafer as Ga-faced.

Keywords: INGAN; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); MULTIPLE QUANTUM WELLS (MQWS); PHOTOLUMINESCENCE (PL); PIEZOELECTRIC FIELD

Document Type: Regular Paper

Publication date: August 1, 2004

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