Excess Si atoms near the pyrolytic-gas-passivated ultrathin silicon oxide/Si(100) interface

Author: Yamada, Hiroshi

Source: Journal of Electronic Materials, Volume 33, Number 7, July 2004 , pp. 802-808(7)

Publisher: Springer

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Abstract:

Number densities of Si and O atoms for 3.5-6.5-nm-thick, silicon-oxide films, grown using a recently proposed in-situ passivation method that uses a little pyrolytic N₂O gas, were determined by Rutherford backscattering spectrometry (RBS). It was found that excess Si atoms relative to the stoichiometric SiO₂ composition exist near the silicon oxide/Si(100) interface, and their number decreases with decreasing humidity. The decrease is remarkable for the pyrolytic-gas passivation (PGP)-grown films at a humidity of less than 1 ppb, which contrasts largely with the humidity dependence of other characteristics, such as density, device reliability, etc., and a remarkable increase can also be confirmed at the same low humidity. Therefore, it is believed that all of the humidity dependence probably has a common origin: PGP results in a reduction of the excess Si atoms near the interface as well as dehydration and causes a decrease in Si dangling bonds by making stronger N-related bonds.

Keywords: Number density; silicon oxide; interface; passivation

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s11664-004-0245-0

Affiliations: 1: Email: yahi@aecl.ntt.co.jp

Publication date: 2004-07-01