Lateral Schottky GaN Rectifiers Formed by Si⁺ Ion Implantation

Authors: Irokawa, Y.; Kim, Jihyun; Ren, F.; Baik, K.H.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J.; Pan, C.-C.; Chen, G.-T.; Chyi, J.-I.

Source: Journal of Electronic Materials, Volume 33, Number 5, 1 May 2004 , pp. 426-430(5)

Publisher: Springer

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Abstract:

Type conversion of p-GaN by direct Si⁺ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si⁺ activation percentage was measured as a function of annealing time (30-300 sec) and temperature (1,000-1,200°C), reaching a maximum of ~30% for 1,200ûC, 2-min anneals. The resulting n-type carrier concentration was 1.1 × 10¹⁸ cm^-3 for a moderate Si⁺ ion dose of ~2 × 10¹⁴ cm^-2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V·K for reverse breakdown voltage.

Keywords: GaN; LATERAL SCHOTTKY DIODES; ION IMPLANTATION

Document Type: Research article

Publication date: 2004-05-01