Lateral Schottky GaN Rectifiers Formed by Si+ Ion Implantation
Authors: Irokawa, Y.; Kim, Jihyun; Ren, F.; Baik, K.H.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J.; Pan, C.-C.; Chen, G.-T.; Chyi, J.-I.
Source: Journal of Electronic Materials, Volume 33, Number 5, 1 May 2004 , pp. 426-430(5)
Abstract:Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+ activation percentage was measured as a function of annealing time (30-300 sec) and temperature (1,000-1,200°C), reaching a maximum of ~30% for 1,200ûC, 2-min anneals. The resulting n-type carrier concentration was 1.1 × 1018 cm-3 for a moderate Si+ ion dose of ~2 × 1014 cm-2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V·K for reverse breakdown voltage.
Document Type: Research article
Publication date: 2004-05-01