Hydride Vapor-Phase Epitaxial GaN Thick Films for Quasi-Substrate Applications: Strain Distribution and Wafer Bending
Authors: Paskova, T.; Darakchieva, V.; Valcheva, E.; Paskov, P.P.; Ivanov, I.G.; Monemar, B.; Böttcher, T.; Roder, C.; Hommel, D.
Source: Journal of Electronic Materials, Volume 33, Number 5, 1 May 2004 , pp. 389-394(6)
Abstract:The strain distribution in thick hydride vapor-phase epitaxial (HVPE)-GaN layers grown on metal-organic vapor-phase epitaxial GaN templates was studied by means of photoluminescence, x-ray mapping, and lattice parameter analysis. A variable temperature x-ray study of the film curvature was used for verification of the strain type. The relation between the strain inhomogeneity and the wafer bending in films residing on sapphire and freestanding on the thickness of the layer and the substrate is analyzed. Possibilities to improve the uniformity of the film characteristics and to reduce the bending of the HVPE-GaN films are discussed.
Document Type: Research Article
Publication date: May 1, 2004