Uniformity in HgCdTe diode arrays fabricated by reactive ion etching
Authors: Pal, R.; Chaudhury, P.; Sharma, B.; Kumar, V.; Musca, C.; Dell, J.; Faraone, L.
Source: Journal of Electronic Materials, Volume 33, Number 2, February 2004 , pp. 141-145(5)
Abstract:Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE). Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R0Aj) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current are studied to identify the bulk and surface current components. Maximum R0Aj=2×107 Θcm2 was achieved in CdTe-passivated, 200×200 µm2 diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology.
Document Type: Research Article
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Publication date: 2004-02-01