Selectively etched tunnel junction for lateral current and optical confinement in InP-based vertical cavity lasers
Authors: Reddy, M.; Feezell, D.; Asano, T.; Buell, D.; Huntington, A.; Koda, R.; Coldren, L.
Source: Journal of Electronic Materials, Volume 33, Number 2, February 2004 , pp. 118-122(5)
Abstract:We demonstrate a thin, selectively lateral-etched, AlIn(Ga)As tunnel-junction (TJ) layer as a current and optical confinement aperture in the InP-based long-wavelength vertical cavity surface-emitting lasers (VCSELs). A high etch selectivity was demonstrated by etching the aperture a distance of several microns without affecting the surrounding InP etch-resistant layer. Edgeemitting lasers enclosing the TJ aperture showed high injection efficiency and low current spreading underneath the aperature. Single-mode continuous-wave operation of a 1.55-m VCSEL was demonstrated successfully with a room-temperature differential efficiency of 21% using a 6-m-wide TJ aperature.
Document Type: Research Article
Affiliations: Email: firstname.lastname@example.org
Publication date: February 1, 2004